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Fast Recovery Epitaxial Diode (FRED) DSEI 20 IFAVM = 17 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type A C TO-220 AC C A DSEI 20-12A A = Anode, C = Cathode C Symbol IFRMS IFAVM yyx IFRM IFSM Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 70 17 220 130 140 110 120 85 80 60 60 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g Features q q q q q TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q International standard package Glass passivated chips Very short recovery time Extremely low losses at high switching frequencies Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque Applications q q q q 78 0.4...0.6 2 q q q q Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Symbol Test Conditions Characteristic Values typ. max. Advantages IR TVJ = 25C TVJ = 25C TVJ = 125C IF = 12 A; VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C 750 250 7 1.87 2.15 1.65 18.2 1.6 60 IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25C VR = 540 V; IF = 20 A; -diF/dt = 100 A/ms L 0.05 mH; TVJ = 100C 40 7 60 mA mA mA V V V mW K/W K/W ns A q q VF VT0 rT RthJC RthJA trr IRM q q q For power-loss calculations only TVJ = TVJM High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling (c) 2000 IXYS All rights reserved 1-2 033 x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions DSEI 20, 1200V 70 A 60 50 6 C 5 4 TVJ=100C VR= 540V 50 A 40 IF=30A IF=60A IF=30A IF=15A IRM TVJ=100C VR= 540V max. IF=30A IF=60A IF=30A IF=15A IF 40 30 20 10 0 0 TVJ= 25C TVJ=100C TVJ=150C Qr 3 2 30 20 max. 1 0 1 VF 2 3V 4 1 10 -diF/dt 100 A/ms 1000 typ. 10 typ. 0 0 200 -diF/dt 400 A/ms 600 Fig. 1 Forward current versus voltage drop. 1.4 1.2 1.0 Kf 0.8 0.6 Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. 60 V 50 VFR 40 30 20 tfr 10 0 0 200 -diF/dt 1200 ns 1000 800 600 400 1.0 s 0.9 0.8 TVJ=100C VR=540V IRM trr 0.7 0.6 0.5 max. IF=30A IF=60A IF=30A IF=15A VFR tfr QR 0.4 0.2 0.0 0 40 TVJ 80 120 C 160 0.4 0.3 0.2 0.1 0 200 -diF/dt typ. TVJ=125C IF=30A 400 A/ms 600 200 0 400 A/ms 600 Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions Dim. A B C D E F G H J K L M N Q Millimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 2.54 1.15 0.64 4.83 3.56 0.38 2.04 0.64 6.85 3.42 1.77 6.35 0.89 5.33 4.82 0.56 2.49 1.39 Min. Inches Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Fig. 7 Transient thermal impedance junction to case. (c) 2000 IXYS All rights reserved 2-2 |
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